Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications<xref rid="cpb_28_1_017104fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017104fn1"><label>*</label><p>Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).</p></fn>

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications**

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu^{1, †}, Ma Su-Yu¹, Hong Jin¹, Yang Ping-Xiong¹, Jing Cheng-Bin¹, Chen Ye¹, Chu Jun-Hao^{1, 2}

(a), (b) PL spectra of an As-doped MBE sample (M1) treated with a single-stage annealing process; (c), (d) the peak energies at different excitation powers and temperatures.