Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications*

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu1, †, Ma Su-Yu1, Hong Jin1, Yang Ping-Xiong1, Jing Cheng-Bin1, Chen Ye1, Chu Jun-Hao1, 2
       

Representative PL spectra of (a) as-grown sample M0 and (b) As-activated annealed sample M2 at ∼ 8 K, and their line-shape fits. The samples are grown by MBE.