Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications*

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu1, †, Ma Su-Yu1, Hong Jin1, Yang Ping-Xiong1, Jing Cheng-Bin1, Chen Ye1, Chu Jun-Hao1, 2
       

Schematics for temperature-dependent carrier transition in p-type Hg0.7Cd0.3Te with Ea ∼ 11 meV and Nc ∼ 1 × 1016 cm−3: (a) T < 26 K, (b) 26 K < T < 90 K, and (c) T > 90 K.