Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications<xref rid="cpb_28_1_017104fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017104fn1"><label>*</label><p>Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).</p></fn>

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications**

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu^{1, †}, Ma Su-Yu¹, Hong Jin¹, Yang Ping-Xiong¹, Jing Cheng-Bin¹, Chen Ye¹, Chu Jun-Hao^{1, 2}

The evolution of the E_F in p- and n-type HgCdTe with temperature for different parameters (for n-type, N_D = 10¹⁴–10¹⁶ cm⁻³; for p-type, N_A = 10¹⁴–10¹⁷ cm⁻³). Triangles and dots represent the temperature points of T_d and T_e, respectively.