Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications<xref rid="cpb_28_1_017104fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017104fn1"><label>*</label><p>Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).</p></fn>

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications**

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu^{1, †}, Ma Su-Yu¹, Hong Jin¹, Yang Ping-Xiong¹, Jing Cheng-Bin¹, Chen Ye¹, Chu Jun-Hao^{1, 2}

Determination of optical bandgap E_g in unintentionally-doped HgCdTe sample L2 by different spectroscopic techniques including transmission, PL, PR, and PC at 77 K. Fit results are shown in green. Marked stars refer to corresponding E_g. E_g(CXT) is obtained from the CXT expression. Dashed vertical line is used to guide the eyes to E_g obtained by PC.