Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications<xref rid="cpb_28_1_017104fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017104fn1"><label>*</label><p>Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).</p></fn>

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications**

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu^{1, †}, Ma Su-Yu¹, Hong Jin¹, Yang Ping-Xiong¹, Jing Cheng-Bin¹, Chen Ye¹, Chu Jun-Hao^{1, 2}

(a) Comparison between PL and absorption spectra of a representative LPE sample, (b)–(e) plots of temperature-dependent optical bandgap value obtained from absorption and PL spectra, and experimental Stokes shifts.^[36] For comparison, the Stokes shifts are also shown according to the CXT formula.