Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications*

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu1, †, Ma Su-Yu1, Hong Jin1, Yang Ping-Xiong1, Jing Cheng-Bin1, Chen Ye1, Chu Jun-Hao1, 2
       

band-edge electronic structure including defect formation and levels in As-doped HgCdTe for different annealing conditions as determined from our measurements. Di (i = d1, d2, and d3) represent deep levels. Color arrows depict a dynamic process that Dd1 can be de-complicated to Dd2 and Dd3, and further from Dd2 to Dd3 with temperature increasing.