Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications<xref rid="cpb_28_1_017104fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017104fn1"><label>*</label><p>Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).</p></fn>

Optical characterization of defects in narrow-gap HgCdTe for infrared detector applications**

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 61790583, 61874043, 61874045, and 61775060) and the National Key Research and Development Program, China (Grant No. 2016YFB0501604).

Yue Fang-Yu^{1, †}, Ma Su-Yu¹, Hong Jin¹, Yang Ping-Xiong¹, Jing Cheng-Bin¹, Chen Ye¹, Chu Jun-Hao^{1, 2}

(a) PL spectra of sample M0 and (b) temperature dependence of the peak energy. For the sake of clarity, the values of F and G in panel (b) are upshifted by 35 meV.