Photodetectors based on two-dimensional materials and organic thin-film heterojunctions*

Project supported by National Science Funds for Creative Research Groups of China (Grant No. 61421002).
Han Jiayue1, Wang Jun1, 2, †
       

(a) 3D schematic diagram and fabrication process of MoS2 and g-C3N4 hybrid dispersions.[109] (b) Schematic diagram of exfoliated MoS2 and g-C3N4 heterojunction nanosheets under illumination.[109] (c) Some important parameters in the UV region (photocurrent, responsivity and detectivity) of MoS2/g-C3N4 photodetector as a function of the power density at a bias voltage of −9 V.[109] (d) 3D schematic view of MoS2/rubrene hybrid device. (e) Optical microscopy image of MoS2/rubrene hybrid device.[103] (f) The current–voltage characteristics under different light intensity excitation.[103]