Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0405700 and 2016YFB0400400), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51602331 and 61404146), and the Shanghai Science and Technology Innovation Action Plan Program, China (Grant No. 17511106200).
Photoluminescence spectra and the peak intensity for samples SiC-I, SiC-II, SiC-III, and SiC-IV. (a) Photoluminescence spectra of sample SiC-I to sample SiC-IV excited by a 325 nm laser at room temperature. The inset on the upper right corner is the luminescence of sample SiC-III acquired by digital camera. (b) Peak intensity and FWHM as a function of sample SiC-I to sample SiC-IV. The peak intensity was extracted from the photoluminescence spectra at about 527 nm.
