Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants<xref rid="cpb_28_1_017101fn1" ref-type="fn">*</xref><fn id="cpb_28_1_017101fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0405700 and 2016YFB0400400), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51602331 and 61404146), and the Shanghai Science and Technology Innovation Action Plan Program, China (Grant No. 17511106200).</p></fn>

Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0405700 and 2016YFB0400400), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51602331 and 61404146), and the Shanghai Science and Technology Innovation Action Plan Program, China (Grant No. 17511106200).

Zhuo Shi-Yi, Liu Xue-Chao^†, Huang Wei^‡, Kong Hai-Kuan, Xin Jun, Shi Er-Wei

Raman spectra of samples SiC-I, SiC-II, SiC-III, and SiC-IV excited by a 514 nm laser at room temperature.