Electronic structures and optical properties of Si- and Sn-doped β-Ga2O3: A GGA+U study<xref rid="cpb_28_1_016301fn1" ref-type="fn">*</xref><fn id="cpb_28_1_016301fn1"><label>*</label>Project supported by the Science and Technology Program of Guangdong Province, China (Grant No. 2015B010112002) and the Science and Technology Project of Guangzhou City, China (Grant No. 201607010250).</fn>

Electronic structures and optical properties of Si- and Sn-doped β-Ga₂O₃: A GGA+U study**

Project supported by the Science and Technology Program of Guangdong Province, China (Grant No. 2015B010112002) and the Science and Technology Project of Guangzhou City, China (Grant No. 201607010250).

Dang Jun-Ning, Zheng Shu-wen^†, Chen Lang, Zheng Tao

The imaginary part ε₂(ω) of β-Ga₂O₃, β-Si_0.0625Ga_1.9375O₃, and β-Sn_0.0625Ga_1.9375O₃ in the (a) x-axis, (b) y-axis, and (c) z-axis directions.