Effect of substrate type on Ni self-assembly process<xref rid="cpb_28_1_016102_fn1" ref-type="fn">*</xref><fn id="cpb_28_1_016102_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61473266 and 61673404), the Program for Science&Technology Innovation Talents in Universities of Henan Province, China (Grant No. 16HASTIT033), the Science and Technique Foundation of Henan Province, China (Grant Nos. 132102210521, 152102210153, 182102210516, and 172102210601), the Key Program in Universities of Henan Province, China (Grant No. 17B520044), and the Science and Technique Project of the China National Textile and Apparel Council (Grant No. 2018104).</p></fn>

Effect of substrate type on Ni self-assembly process**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61473266 and 61673404), the Program for Science&Technology Innovation Talents in Universities of Henan Province, China (Grant No. 16HASTIT033), the Science and Technique Foundation of Henan Province, China (Grant Nos. 132102210521, 152102210153, 182102210516, and 172102210601), the Key Program in Universities of Henan Province, China (Grant No. 17B520044), and the Science and Technique Project of the China National Textile and Apparel Council (Grant No. 2018104).

Chai Xuzhao^{1, †}, Qu Boyang^{1, ‡}, Jiao Yuechao¹, Liu Ping¹, Ma Yanxia¹, Wang Fengge¹, Li Xiaoquan¹, Fang Xiangqian¹, Han Ping², Zhang Rong²

The Ni film annealing on the Si (111) substrate: (a) 700 °C; (b) 800 °C; (c) 900 °C.