Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes<xref rid="cpb_28_1_016101_fn1" ref-type="fn">*</xref><fn id="cpb_28_1_016101_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union’s Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and the Natural Science Foundation of Zhejiang Province, China (Grant No. LY18E020013).</p></fn>

Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes**

Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Union’s Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and the Natural Science Foundation of Zhejiang Province, China (Grant No. LY18E020013).

Mei Ying-Shuang¹, Chen Cheng-Ke¹, Jiang Mei-Yan¹, Li Xiao¹, Ruan Yin-Lan², Hu Xiao-Jun^{1, †}

(a) The depth profiles of normalized intensity and FWHM of SiV peak in the range of crystal size, and (b) the FWHM and position of diamond peak in the range of crystal size for the samples, which were fabricated under 2.5 and 3.5 kPa for 4 and 6 h (averaged over 5 crystals for each selected groups).