High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars<xref rid="cpb_28_1_014208_fn1" ref-type="fn">*</xref><fn id="cpb_28_1_014208_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).</p></fn>

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

Xie Sheng-Wen^{1, 2}, Zhang Yu^{1, 2, †}, Yang Cheng-Ao^{1, 2}, Huang Shu-Shan^{1, 2}, Yuan Ye^{1, 2}, Zhang Yi^{1, 2}, Shang Jin-Ming^{1, 2}, Shao Fu-Hui^{1, 2}, Xu Ying-Qiang^{1, 2}, Ni Hai-Qiao^{1, 2}, Niu Zhi-Chuan^{1, 2, ‡}

Emission wavelengths at different injection currents for the partial digital-grown device at 290 K. The inset shows the relationship between lasing wavelengths and operating currents.