High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars<xref rid="cpb_28_1_014208_fn1" ref-type="fn">*</xref><fn id="cpb_28_1_014208_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).</p></fn>

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

Xie Sheng-Wen^{1, 2}, Zhang Yu^{1, 2, †}, Yang Cheng-Ao^{1, 2}, Huang Shu-Shan^{1, 2}, Yuan Ye^{1, 2}, Zhang Yi^{1, 2}, Shang Jin-Ming^{1, 2}, Shao Fu-Hui^{1, 2}, Xu Ying-Qiang^{1, 2}, Ni Hai-Qiao^{1, 2}, Niu Zhi-Chuan^{1, 2, ‡}

Output power and power efficiency versus laser current for a 2000 μm × 100 μm single emitter emitting around 2 μm. The facets were AR/HR coated and the device was mounted p-side down. Maximum CW power and power efficiency were 1.4 W and 26%, respectively.