High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars*

Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

Xie Sheng-Wen1, 2, Zhang Yu1, 2, †, Yang Cheng-Ao1, 2, Huang Shu-Shan1, 2, Yuan Ye1, 2, Zhang Yi1, 2, Shang Jin-Ming1, 2, Shao Fu-Hui1, 2, Xu Ying-Qiang1, 2, Ni Hai-Qiao1, 2, Niu Zhi-Chuan1, 2, ‡
       

Schematic time shutter sequence utilized during gradient layers growth from Al0.5Ga0.5As0.04Sb0.96 to Al0.25Ga0.75As0.02Sb0.98 via digital alloy technique.