Standing-wave spectrometry in silicon nano-waveguides using reflection-based near-field scanning optical microscopy<xref rid="cpb_28_1_010702fn1" ref-type="fn">*</xref><fn id="cpb_28_1_010702fn1"><label>*</label><p>Project supported by National Key R&D Program of China (Grant No. 2017YFA0303800), National Natural Science Foundation of China (Grant No. 61575218), and Defense Industrial Technology Development Program, China (Grant No. JCKY201601C006).</p></fn>

Standing-wave spectrometry in silicon nano-waveguides using reflection-based near-field scanning optical microscopy**

Project supported by National Key R&D Program of China (Grant No. 2017YFA0303800), National Natural Science Foundation of China (Grant No. 61575218), and Defense Industrial Technology Development Program, China (Grant No. JCKY201601C006).

Sun Yi-Zhi^{1, 2}, Ding Wei^{2, ‡}, Wang Bin-Bin³, Salas-Montiel Rafael³, Blaize Sylvain³, Bachelot Renaud³, Fan Zhong-Wei⁴, Feng Li-Shuang^{1, †}

(a) Schematic of light–probe interactions in a waveguide with etched holes. The length of the waveguide L = L₁ + L₂ ≈ 4 mm, and the etched holes are located at L₁ ≈ 0.6L. When the AFM probe is vibrated at position A or B, the component signal beams of case II₁ are depicted. (b) SEM image of the etched holes and near-field image measured by the reflection-based NSOM at λ = 1620 nm. (c) and (d) SWS acquired at positions A and B. (e) Amplitude spectra of the zero-spatial-frequency components of the SWS in (c) and (d).