Standing-wave spectrometry in silicon nano-waveguides using reflection-based near-field scanning optical microscopy<xref rid="cpb_28_1_010702fn1" ref-type="fn">*</xref><fn id="cpb_28_1_010702fn1"><label>*</label><p>Project supported by National Key R&D Program of China (Grant No. 2017YFA0303800), National Natural Science Foundation of China (Grant No. 61575218), and Defense Industrial Technology Development Program, China (Grant No. JCKY201601C006).</p></fn>

Standing-wave spectrometry in silicon nano-waveguides using reflection-based near-field scanning optical microscopy**

Project supported by National Key R&D Program of China (Grant No. 2017YFA0303800), National Natural Science Foundation of China (Grant No. 61575218), and Defense Industrial Technology Development Program, China (Grant No. JCKY201601C006).

Sun Yi-Zhi^{1, 2}, Ding Wei^{2, ‡}, Wang Bin-Bin³, Salas-Montiel Rafael³, Blaize Sylvain³, Bachelot Renaud³, Fan Zhong-Wei⁴, Feng Li-Shuang^{1, †}

(a) Near-field images measured by a reflection-based NSOM at λ = 1620.04 nm and 1620.07 nm, corresponding to 2Φ_II = 0 and π/2, respectively. (b) Calculated distributions of the electric field intensity ( |Ex|2+|Ey|2+|Ez|2 ) and polarization of the guided mode at λ = 1620 nm. Both scale bars in (a) and (b) are 500 nm. The dotted line in (b) indicates the moving trail of the AFM tip. (c) and (d) Comparisons of the experimental line cuts (hollow squares), the mode profiles (gray lines), and the FDTD simulated |α_ext| and |α_refl| (magenta lines). Note that the mode profiles |E_z| and |E|² are just a guide to highlight the effects of different field components.