Simulation of SiC radiation detector degradation*

Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).

Huang Hai-Li1, 2, Tang Xiao-Yan1, 2, †, Guo Hui1, 2, Zhang Yi-Men1, 2, Wang Yu-Tian1, 2, Zhang Yu-Ming1, 2
       

Simulation result from CASINO 2.4. Vertical incidence of 8.2 MeV electrons into a 390 μm SiC layer. (a) Energy of the transmitted electrons. (b) Profile of energy deposition in SiC.