Simulation of SiC radiation detector degradation<xref rid="cpb_28_1_010701fn1" ref-type="fn">*</xref><fn id="cpb_28_1_010701fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).</p></fn>

Simulation of SiC radiation detector degradation**

Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).

Huang Hai-Li^{1, 2}, Tang Xiao-Yan^{1, 2, †}, Guo Hui^{1, 2}, Zhang Yi-Men^{1, 2}, Wang Yu-Tian^{1, 2}, Zhang Yu-Ming^{1, 2}

Simulation result from CASINO 2.4. Vertical incidence of 8.2 MeV electrons into a 390 μm SiC layer. (a) Energy of the transmitted electrons. (b) Profile of energy deposition in SiC.