Simulation of SiC radiation detector degradation<xref rid="cpb_28_1_010701fn1" ref-type="fn">*</xref><fn id="cpb_28_1_010701fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).</p></fn>

Simulation of SiC radiation detector degradation**

Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).

Huang Hai-Li^{1, 2}, Tang Xiao-Yan^{1, 2, †}, Guo Hui^{1, 2}, Zhang Yi-Men^{1, 2}, Wang Yu-Tian^{1, 2}, Zhang Yu-Ming^{1, 2}

Incidence of a 2 MeV α particle into a –10 V biased SiC Schottky detector at 1 ns: (a) pulse current and integrated output charge, (b) electron and hole density along the trajectory at different moments.