Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors<xref rid="cpb_27_12_128502fn1" ref-type="fn">*</xref><fn id="cpb_27_12_128502fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0307200 and 2017YFA0303800), the National Natural Science Foundations of China (Grant Nos. 61522507 and 61775183), the Key Research and Development Program in Shaanxi Province of China (Grant No. 2017KJXX-12), and the Fundamental Research Funds for the Central Universities (Grant Nos. 3102017jc01001 and 3102018jcc034).</p></fn>

Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0307200 and 2017YFA0303800), the National Natural Science Foundations of China (Grant Nos. 61522507 and 61775183), the Key Research and Development Program in Shaanxi Province of China (Grant No. 2017KJXX-12), and the Fundamental Research Funds for the Central Universities (Grant Nos. 3102017jc01001 and 3102018jcc034).

Hu Siqi¹, Tian Ruijuan¹, Luo Xiaoguang², Yin Rui¹, Cheng Yingchun², Zhao Jianlin¹, Wang Xiaomu³, Gan Xuetao^{1, †}

(color online) Photocurrent measurements of the phototransistor with a 532-nm laser illuminated at one BP-graphene contact region. (a) I_ds with respect to V_g at V_ds = 0 V in dark (black line) and illumination (red line) at the contact region. The laser power is 200 μW. Inset: I_ds versus V_ds curves at V_g = 0 V. (b) The responsivity R versus V_ds curves when V_g = 1 V and (c) R versus V_g curves when V_ds = –2 V with three different laser powers (black: 2 μW, red: 25 μW, blue: 200 μW). (d) Time response measurement of I_ds by using a chopper.