Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors<xref rid="cpb_27_12_128502fn1" ref-type="fn">*</xref><fn id="cpb_27_12_128502fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0307200 and 2017YFA0303800), the National Natural Science Foundations of China (Grant Nos. 61522507 and 61775183), the Key Research and Development Program in Shaanxi Province of China (Grant No. 2017KJXX-12), and the Fundamental Research Funds for the Central Universities (Grant Nos. 3102017jc01001 and 3102018jcc034).</p></fn>

Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0307200 and 2017YFA0303800), the National Natural Science Foundations of China (Grant Nos. 61522507 and 61775183), the Key Research and Development Program in Shaanxi Province of China (Grant No. 2017KJXX-12), and the Fundamental Research Funds for the Central Universities (Grant Nos. 3102017jc01001 and 3102018jcc034).

Hu Siqi¹, Tian Ruijuan¹, Luo Xiaoguang², Yin Rui¹, Cheng Yingchun², Zhao Jianlin¹, Wang Xiaomu³, Gan Xuetao^{1, †}

(color online) BP FET based on van der Waals heterojunctions. (a) Cross-section schematics of a BP FET with all 2D constituents on SiO₂/Si substrate. The three-terminal measurement scheme is also shown. (b) Optical image of the device. The scale bar is 20 μm. (c) Raman spectra of BP flakes. (d) Atomic force microscopy image of the BP FET inside the dotted black box shown in panel (b). BP thickness is 8 nm and h-BN_T thickness is 12 nm. The scale bar is 5 μm.