Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie Xin^{1, 2, †}, Bi Da-Wei¹, Hu Zhi-Yuan¹, Zhu Hui-Long^{1, 2}, Zhang Meng-Ying^{1, 2}, Zhang Zheng-Xuan¹, Zou Shi-Chang¹

(color online) Plots of back-gate threshold voltage versus total ionizing dose for PDSOI nMOSFETs with W/L = 10 μm/0.35 μm under ON bias and PG bias.