Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET
Xie Xin1, 2, †, Bi Da-Wei1, Hu Zhi-Yuan1, Zhu Hui-Long1, 2, Zhang Meng-Ying1, 2, Zhang Zheng-Xuan1, Zou Shi-Chang1
       

(color online) Back-gate transfer characteristic curves of the PDSOI nMOSFETs with W/L = 10 μm/0.35 μm (a) under ON bias and (b) under PG bias.