Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET
Xie Xin1, 2, †, Bi Da-Wei1, Hu Zhi-Yuan1, Zhu Hui-Long1, 2, Zhang Meng-Ying1, 2, Zhang Zheng-Xuan1, Zou Shi-Chang1
       

(color online) Plots of front-gate threshold voltage versus total ionizing dose for PDSOI nMOSFETs with W/L = 10 μm/0.35 μm under ON bias and PG bias.