Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie Xin^{1, 2, †}, Bi Da-Wei¹, Hu Zhi-Yuan¹, Zhu Hui-Long^{1, 2}, Zhang Meng-Ying^{1, 2}, Zhang Zheng-Xuan¹, Zou Shi-Chang¹

(color online) Distribution of electric field during back-gate curves’ measurement. Back gate is biased at 45 V.