Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie Xin^{1, 2, †}, Bi Da-Wei¹, Hu Zhi-Yuan¹, Zhu Hui-Long^{1, 2}, Zhang Meng-Ying^{1, 2}, Zhang Zheng-Xuan¹, Zou Shi-Chang¹

Plot of change rate of V_th,bg versus total ionizing dose under ON bias and PG bias. After irradiation, change rate under PG bias is larger than that under ON bias.