1.3-μm InAs/GaAs quantum dots grown on Si substrates<xref rid="cpb_27_12_128105fn1" ref-type="fn">*</xref><fn id="cpb_27_12_128105fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant Nos. 61790581, 61435012, and 61505196).</p></fn>

1.3-μm InAs/GaAs quantum dots grown on Si substrates**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant Nos. 61790581, 61435012, and 61505196).

Shao Fu-Hui^{1, 2}, Zhang Yi^{1, 2}, Su Xiang-Bin^{1, 2}, Xie Sheng-Wen^{1, 2}, Shang Jin-Ming^{1, 2}, Zhao Yun-Hao³, Cai Chen-Yuan³, Che Ren-Chao³, Xu Ying-Qiang^{1, 2}, Ni Hai-Qiao^{1, 2}, Niu Zhi-Chuan^{1, 2, †}

(color online) GPA analysis of stress free InAs quantum dots: (a) the quantum dot of InAs, (b) ε_xx, (c) ε_yy, (d) Δ_xy, (e) ω_xy, and (f) ε_xy.