1.3-μm InAs/GaAs quantum dots grown on Si substrates Project supported by the National Key Research and Development Program of China (Grant No. 2018YFA0306101), the Scientific Instrument Developing Project of Chinese Academy of Sciences (Grant No. YJKYYQ20170032), and the National Natural Science Foundation of China (Grant Nos. 61790581, 61435012, and 61505196). |
(color online) GPA analysis of interface between Si and AlAs on sample A: (a) the interface of Si and AlAs, (b) εxx, (c) εyy, (d) Δxy, (e) ωxy, and (f) εxy. |