Short-wave infrared InGaAs photodetectors and focal plane arrays<xref rid="cpb_27_12_128102fn1" ref-type="fn">*</xref><fn id="cpb_27_12_128102fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402400), the National Natural Science Foundation of China (Grant Nos. 61675225, 61605232, and 61775228), and the Shanghai Rising-Star Program, China (Grant No. 17QA1404900).</p></fn>

Short-wave infrared InGaAs photodetectors and focal plane arrays**

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402400), the National Natural Science Foundation of China (Grant Nos. 61675225, 61605232, and 61775228), and the Shanghai Rising-Star Program, China (Grant No. 17QA1404900).

Zhang Yong-Gang^{1, 2, †}, Gu Yi^{1, 2}, Shao Xiu-Mei¹, Li Xue¹, Gong Hai-Mei¹, Fang Jia-Xiong¹

(color online) Composition-dependent band gap and lattice constant relationship of quaternary In_xGa_{1 − x}As_yP_{1 − y} system. Solid lines show contours of band gap energy in unit eV, dashed lines refer to contours of lattice constants in unit Å, and four axes represent ternaries of In_xGa_{1 − x}P, In_xGa_{1 − x}As, GsAs_yP_{1 − y}, and InAs_yP_{1 − y} respectively. Shadow region represents indirect band zone.