Recent research process on perovskite photodetectors: A review for photodetector—materials, physics, and applications*

Project supported by the International Cooperation and Exchange Project of Jilin Province, China (Grant Nos. 20170414002GH and 20180414001GH).

Zhao Yan, Li Chenglong, Shen Liang
       

(color online) (a) Optical field distributions in the red narrowband photodiodes (fidi thicknesses of 500-nm CH3NH3PbI2Br and 60-nm C60) for four wavelengths: for λ < 600 nm (the Beer–Lambert region) photons cannot penetrate the whole of the film and carriers are surface generated, and for 700 nm > λ > 600 nm (the cavity region) the photo carriers are volume-generated. (b) EQEs of narrowband red CCN photodiodes with various junction thicknesses at a reverse bias of −0.5 V. The thinnest junction delivers an almost broadband response because surface- and volume-generated carriers are collected. By increasing the junction thickness, surface generation and volume generation are distinguished and the EQE at shorter wavelengths (in the Beer–Lambert region) is suppressed (from Ref. [30]).