Recent research process on perovskite photodetectors: A review for photodetector—materials, physics, and applications*

Project supported by the International Cooperation and Exchange Project of Jilin Province, China (Grant Nos. 20170414002GH and 20180414001GH).

Zhao Yan, Li Chenglong, Shen Liang
       

(color online) (a) X-ray diffraction (XRD) pattern of solution processed perovskite films on ITO/PEDOT:PSS with the crystal structure pictured in the inset. (b) Cartoon of the four different perovskite photodiode (PPD) structures: Type 1 with thin PC60BM (10 nm) layer, Type 2 with thick PC60BM (50 nm) layer, Type 3 with thick C60 layer, and Type 4 with thick PC60BM (50 nm)/C60 (130 nm) layer. (c) Dark current density–voltage (JV) characteristics obtained at a scanning rate of 1 mV·s−1. Each point shown for the Type 4 devices are an average of the dark current measured over several seconds after each voltage step. (d) Typical external quantum efficiency spectra (measured at 120 Hz) for each of the four PPD types (from Ref. [22]).