Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas<xref rid="cpb_27_12_127805fn1" ref-type="fn">*</xref><fn id="cpb_27_12_127805fn1"><label>*</label>Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).</fn>

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas**

Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Wang Hai-Long, Zhang Xiao-Han, Wang Hong-Xia, Li Bin, Chen Chong, Li Yong-Xian, Yan Huan, Wu Zhi-Sheng, Jiang Hao^†

(color online) (a) PL spectra, (b) AFM image (10 μm × 10 μm) of the 10-s sample, and (c) control sample which is deposited under N₂ carrier gas.