Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas<xref rid="cpb_27_12_127805fn1" ref-type="fn">*</xref><fn id="cpb_27_12_127805fn1"><label>*</label>Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).</fn>

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas**

Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Wang Hai-Long, Zhang Xiao-Han, Wang Hong-Xia, Li Bin, Chen Chong, Li Yong-Xian, Yan Huan, Wu Zhi-Sheng, Jiang Hao^†

(color online) (105) RSMs of samples with duration times of (a) 0 s, (b) 5 s, and (c) 10 s. Relaxed line and strained line are plotted.