Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N2 and H2 carrier gas<xref rid="cpb_27_12_127805fn1" ref-type="fn">*</xref><fn id="cpb_27_12_127805fn1"><label>*</label>Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).</fn>

Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas**

Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant No. 2015B010112001) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Wang Hai-Long, Zhang Xiao-Han, Wang Hong-Xia, Li Bin, Chen Chong, Li Yong-Xian, Yan Huan, Wu Zhi-Sheng, Jiang Hao^†

(color online) PL spectra with inset showing carrier gas flow sequences, where partial nitrogen is replaced by hydrogen during mixture duration time. All metal and nitride precursors are kept constant, respectively.