Influence of carrier gas H<sub>2</sub> flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures<xref rid="cpb_27_12_127803fn1" ref-type="fn">*</xref><fn id="cpb_27_12_127803fn1"><label>*</label><p>Project supported by the the Science Challenge Project of China (Grant No. TZ2016003), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, and 61474110), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).</p></fn>

Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures**

Project supported by the the Science Challenge Project of China (Grant No. TZ2016003), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, and 61474110), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

Liu Shuang-Tao^{1, 2}, Yang Jing^{1, †}, Zhao De-Gang^{1, 3, ‡}, Jiang De-Sheng¹, Liang Feng¹, Chen Ping¹, Zhu Jian-Jun¹, Liu Zong-Shun¹, Liu Wei¹, Xing Yao¹, Peng Li-Yuan¹, Zhang Li-Qun⁴, Wang Wen-Jie⁵, Li Mo⁵

(color online) Plots of H atoms’ concentration versus depth for samples A (a) and B (b) after being annealed in a temperature range from 550 °C to 850 °C.