Epitaxially strained SnTiO<sub>3</sub> at finite temperatures<xref rid="cpb_27_12_127702fn1" ref-type="fn">*</xref><fn id="cpb_27_12_127702fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11574246, 51390472, U1537210, and 11564010), the National Basic Research Program of China (Grant No. 2015CB654903), the Natural Science Foundation of Guangxi Zhuang Autonomous Region (Grant Nos. GA139008 and AA138162), and the “111” Project of China (Grant No. B14040).</p></fn>

Epitaxially strained SnTiO₃ at finite temperatures**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11574246, 51390472, U1537210, and 11564010), the National Basic Research Program of China (Grant No. 2015CB654903), the Natural Science Foundation of Guangxi Zhuang Autonomous Region (Grant Nos. GA139008 and AA138162), and the “111” Project of China (Grant No. B14040).

Wang Dawei^{1, †}, Liu Laijun^{2, ‡}, Liu Jia³, Zhang Nan⁴, Wei Xiaoyong⁴

(color online) Hysteresis loop of SnTiO₃ at s = 0.75% (a) and s = 0% (b) at 300 K. The electric field is applied along the z axis.