A simulation study of field plate termination in Ga2O3 Schottky barrier diodes<xref rid="cpb_27_12_127302_fn1" ref-type="fn">*</xref><fn id="cpb_27_12_127302_fn1"><label>*</label>Project supported by the Research Fund of Low Cost Fabrication of GaN Power Devices and System Integration, China (Grant No. JCYJ20160226192639004), the Research Fund of AlGaN HEMT MEMS Sensor for Work in Extreme Environment, China (Grant No. JCYJ20170412153356899), and the Research Fund of Reliability Mechanism and Circuit Simulation of GaN HEMT, China (Grant No. 2017A050506002).</fn>

A simulation study of field plate termination in Ga₂O₃ Schottky barrier diodes**

Project supported by the Research Fund of Low Cost Fabrication of GaN Power Devices and System Integration, China (Grant No. JCYJ20160226192639004), the Research Fund of AlGaN HEMT MEMS Sensor for Work in Extreme Environment, China (Grant No. JCYJ20170412153356899), and the Research Fund of Reliability Mechanism and Circuit Simulation of GaN HEMT, China (Grant No. 2017A050506002).

Wang Hui^{1, 2, 3, 4}, Jiang Ling-Li^{1, 3, 4}, Lin Xin-Peng^{1, 3, 4}, Lei Si-Qi^{1, 3, 4}, Yu Hong-Yu^{1, 3, 4, †}

(color online) Plots of E_j and E_p with dielectric thickness for GaN SBDs. The reverse bias voltage is (a) 600 V and (b) 1200 V.