Temporal pulsed x-ray response of CdZnTe: In detector<xref rid="cpb_27_12_127202fn1" ref-type="fn">*</xref> <fn id="cpb_27_12_127202fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51702271 and U1631116), the Young and Middle-aged Teachers Education and Scientific Research Foundation of Fujian Province, China (Grant No. JAT170407), the High Level Talent Project of Xiamen University of Technology, China (Grant No.YKJ16016R), and the Fund of the State Key Laboratory of Solidification Processing in NWPU, China (Grant No. SKLSP201741).</p> </fn>

Temporal pulsed x-ray response of CdZnTe: In detector* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 51702271 and U1631116), the Young and Middle-aged Teachers Education and Scientific Research Foundation of Fujian Province, China (Grant No. JAT170407), the High Level Talent Project of Xiamen University of Technology, China (Grant No.YKJ16016R), and the Fund of the State Key Laboratory of Solidification Processing in NWPU, China (Grant No. SKLSP201741).

Guo Rong-Rong^{1, 2}, Xu Ya-Dong^{2, †}, Zha Gang-Qiang², Wang Tao², Jie Wan-Qi²

(color online) (a) Typical transient current waveform for CZT under bias voltage of 300 V, (b) schematic illustration of the formation of pulsed x-rays induced transient current waveform, and (c) major process of carrier restored by trapping C_n(_p), detrapping e_n(_p), and recombination R_n(_p).