Analysis of tail bits generation of multilevel storage in resistive switching memory

Liu Jing^{1, 2}, Xu Xiaoxin^{1, 2, †}, Chen Chuanbing^{1, 2}, Gong Tiancheng^{1, 2}, Yu Zhaoan², Luo Qing², Yuan Peng^{1, 2}, Dong Danian², Liu Qi², Long Shibing², Lv Hangbing^{2, ‡}, Liu Ming²

(color online) Physical modeling for the retention loss of (a) IRS^S and (b) IRS^R. Tail bits (1) result from the depletion progress on the filament tip due to lateral diffusion of Cu ions. Tail bits (2) stem from the vertical diffusion from the residual filament and Cu reservoir on the inert electrode.