Review of photoresponsive properties at SrTiO3-based heterointerfaces |
(color online) Resistance as a function of time during the illumination with the photons energy from 1.44 eV to 3.65 eV at 4.2 K. Each change in the photon energy results in a pronounced step in the sample resistance; the photon energies, in eV, are shown beside each of the steps. Note the break on the time axis showing the persistence of the resistance change. The inset shows a schematic band diagram (CB: conduction band, VB: valence band, and EF: Fermi-level) for a LAO/STO heterostructure under the illumination and presuming an internal potential build up in the LAO.[ |