Effect of graphene/ZnO hybrid transparent electrode on characteristics of GaN light-emitting diodes*

Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA034801), the Foundation of the State Key Laboratory of Mechanical Transmission of Chongqing University, China (Grant Nos. SKLMT-ZZKT-2017M15 and SKLM-ZZKT-2015Z16), the National Natural Science Foundation of China (Grant Nos. 11544010, 11374359, 11304405, and 1155305), the Natural Science Foundation of Chongqing, China (Grant Nos. cstc2015jcyjA50035 and cstc2015jcyjA1660), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2018CDJDWL0011, 106112017CDJQJ328839, 106112016CDJZR288805, and 106112015CDJXY300002), and the Sharing Fund of Large-Scale Equipment of Chongqing University, China (Grant Nos. 201612150094, 201712150005, 201712150006, and 201712150010).

Tan Jun-Tian1, Zhang Shu-Fang2, †, Qian Ming-Can1, Luo Hai-Jun1, 3, ‡, Wu Fang1, Long Xing-Ming3, Fang Liang1, §, Wei Da-Peng4, Hu Bao-Shan5
       

(color online) The distributions of temperature and active layer surface current density of four kinds of LED chips with various TCLs. (a) 4L Gr, (b) 1L Gr/300-nmAZO, (c) 1L Gr/300-nmGZO, and (d) 2L Gr/300-nm IZO.