Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron–phosphorous nanoribbons

Zhao Hong¹, Peng Dan-Dan¹, He Jun^{1, †}, Li Xin-Mei¹, Long Meng-Qiu^{1, 2, ‡}

(color online) (b) [(c)] Band structures for the left electrode (left panels), transmission (middle panels) and band structures for the right electrode (right panels) of M4 in PC [APC] at . The blue area refers to BW.