Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron–phosphorous nanoribbons

Zhao Hong¹, Peng Dan-Dan¹, He Jun^{1, †}, Li Xin-Mei¹, Long Meng-Qiu^{1, 2, ‡}

(color online) (a) [(b)] I–V curves of M3 M4, with insets showing SFE. (c) and (d) [(e) and (f)] Spin-resolved TS as a function of electron energy and BV for M4 in PC [APC]. Region between black solid lines denotes BW, and negative (positive) BW is on the left (right).