Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron–phosphorous nanoribbons

Zhao Hong¹, Peng Dan-Dan¹, He Jun^{1, †}, Li Xin-Mei¹, Long Meng-Qiu^{1, 2, ‡}

(color online) (a) Two-probe system of M4. (b) [(c)] TS for M4 in PC [APC]. (d) [(e)], (f) [(g)] LDOS of up-spin [down-spin] for M4 in PC [APC] at the FL under bias of 0.0 V, the isovalue is 0.1 Å⁻³. The Si atoms are denoted by a red ball.