Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron

Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron–phosphorous nanoribbons

Zhao Hong¹, Peng Dan-Dan¹, He Jun^{1, †}, Li Xin-Mei¹, Long Meng-Qiu^{1, 2, ‡}

(color online) (a) Top view and (b) side view of the two-probe system of M3. (c) [(d)] TS for M3 in PC [APC] at 0.0 V. (e)–(h) refer to LDOS of M3 in 0.3 eV at 0.0 V, followed by up-spin state in PC, down-spin state in PC, up-spin state in APC, and down-spin state in APC, respectively, and the isovalue is 0.1 Å ^{− 3}.