Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
Zhang Jin-Xin1, Guo Hong-Xia2, 3, Pan Xiao-Yu3, Guo Qi2, Zhang Feng-Qi3, Feng Juan1, †, Wang Xin2, Wei Yin2, Wu Xian-Xiang1
       

Defect distributions subjected to γ irradiation at different biases in SiGe HBT: (a) forward bias, (b) cutoff bias, and (c) all-grounded bias.