Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures
Wang Zhen-Hua1, †, Gao Xuan P A2, Zhang Zhi-Dong1
       

(color online) (a) The characteristics of n-Bi2Te3/p-Si junctions in the dark and under illumination with various wavelengths of light. (b) The dependence of junction photovoltage on time under light illumination with various wavelengths of light. Modified from Wang et al., Ref. [102].