Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures
Wang Zhen-Hua1, †, Gao Xuan P A2, Zhang Zhi-Dong1
       

(color online) (a) Raman spectra of CuxBi2Se3 film samples with x = 0, 0.07, 0.10, and 0.11. (b) The resistivity of CuxBi2Se3 films with high Cu concentration dependence on temperature. (c) Temperature dependence of resistivity of Cu0.076Bi2Se3 (black square) and after (red circle) relaxation at 2 K for 29 h. (d) Time dependence of resistivity of Cu0.076Bi2Se3 at 2 K over the relaxation process of 29 h. (e) Time dependence of resistivity of CuxBi2Se3 with various Cu concentrations (x = 0.059, 0.071, 0.076, 0.107) at 2 K. Solid green lines are best fits. Modified from Li et al., Ref. [47]